Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE

doi:10.1016/j.solmat.2017.06.046

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE
	Dai, P (Dai, Pan); Ji, L (Ji, Lian); Tan, M (Tan, Ming); Uchida, S (Uchida, Shiro); Wu, YY (Wu, Yuanyuan); Abuduwayiti, A (Abuduwayiti, Aierken)[ 3 ]; Heini, M (Heini, Maliya); Guo, Q (Guo, Qi); Bian, LF (Bian, Lifeng); Lu, SL (Lu, Shulong)
刊名	SOLAR ENERGY MATERIALS AND SOLAR CELLS
	2017
卷号	171 期号:11 页码:118-122
关键词	Electron Irradiation Four-junction Solar Cell Molecular Beam Epitaxy
ISSN号	0927-0248
DOI	10.1016/j.solmat.2017.06.046
英文摘要	For application in space environments, the effect of 1-MeV electron irradiation on wafer-bonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied. After exposure to 1-MeV electron irradiation at 1 x 15 e/cm(2), an end of life remaining factor of approximately 85% was obtained. The wafer bonding interface was studied by spectral response and transmission electron microscopy. 1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four -junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface.
WOS记录号	WOS:000408298300014
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/5028]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室新疆理化技术研究所_材料物理与化学研究室
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou Ind Pk,Ruoshui Rd 398, Suzhou, Peoples R China 2.Chiba Inst Technol, Dept Mech Sci & Engn, Fac Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Space Environm, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Dai, P ,Ji, L ,Tan, M ,et al. Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2017,171(11):118-122.
APA	Dai, P .,Ji, L .,Tan, M .,Uchida, S .,Wu, YY .,...&Yang, H .(2017).Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE.SOLAR ENERGY MATERIALS AND SOLAR CELLS,171(11),118-122.
MLA	Dai, P ,et al."Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE".SOLAR ENERGY MATERIALS AND SOLAR CELLS 171.11(2017):118-122.