Total dose responses and reliability issues of 65 nm NMOSFETs

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Total dose responses and reliability issues of 65 nm NMOSFETs
	Yu DZ(余德昭)1; Zheng QW(郑齐文)1; Cui JW(崔江维)1; Zhou H(周航)1; Yu XF(余学峰)1 ; Guo Q(郭旗)1
刊名	Journal of Semiconductors
	2016
卷号	37 期号:6 页码:133-139
ISSN号	1674-4926
英文摘要	In this paper,total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. "Radiation-induced narrow channel effect" is observed in a narrow channel device.Similar to total dose responses of NMOSFETs,narrow channel NMOSFEs have larger hot-carrier-induced degradation than wide channel devices.Step Time-Dependent Dielectric Breakdown(TDDB) stresses are applied,and narrow channel devices have higher breakdown voltage than wide channel devices,which agree with "weakest link" theory of TDDB.Experimental results show that linear current,transconductance,saturated drain current and subthreshold swing are superposed degenerated by total dose irradiation and reliability issues,which may result in different lifetime from that considering total dose irradiation reliability issues separately.
CSCD记录号	CSCD:5751259
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/4988]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室新疆理化技术研究所_材料物理与化学研究室
作者单位	1.Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2.Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China 3.University of Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式 GB/T 7714	Yu DZ,Zheng QW,Cui JW,et al. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. Journal of Semiconductors,2016,37(6):133-139.
APA	Yu DZ,Zheng QW,Cui JW,Zhou H,Yu XF,&Guo Q.(2016).Total dose responses and reliability issues of 65 nm NMOSFETs.Journal of Semiconductors,37(6),133-139.
MLA	Yu DZ,et al."Total dose responses and reliability issues of 65 nm NMOSFETs".Journal of Semiconductors 37.6(2016):133-139.