Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

doi:10.1007/s11425-008-0039-6

	Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
	Hsiao Ling 1; Ju QiangChang 2; Wang Shu 3
刊名	SCIENCE IN CHINA SERIES A-MATHEMATICS
	2008-09-01
卷号	51 期号:9 页码:1619-1630
关键词	quasi-neutral limit drift-diffusion equations multiple scaling asymptotic expansions
ISSN号	1006-9283
DOI	10.1007/s11425-008-0039-6
英文摘要	The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.
WOS研究方向	Mathematics
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000258251100005
内容类型	期刊论文
源URL	[http://ir.amss.ac.cn/handle/2S8OKBNM/6514]
专题	中国科学院数学与系统科学研究院
通讯作者	Hsiao Ling
作者单位	1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China 3.Beijing Univ Technol, Coll Sci, Beijing 100022, Peoples R China
推荐引用方式 GB/T 7714	Hsiao Ling,Ju QiangChang,Wang Shu. Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS,2008,51(9):1619-1630.
APA	Hsiao Ling,Ju QiangChang,&Wang Shu.(2008).Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile.SCIENCE IN CHINA SERIES A-MATHEMATICS,51(9),1619-1630.
MLA	Hsiao Ling,et al."Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile".SCIENCE IN CHINA SERIES A-MATHEMATICS 51.9(2008):1619-1630.