a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package

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	a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package
	Cheng Liwen ; Sheng Yang ; Chang Shengxia ; Hu Weida ; Lu Wei
	2012
会议名称	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
会议日期	August 28, 2012 - August 31, 2012
会议地点	Shanghai, China
关键词	Computer simulation Gallium alloys Gallium nitride Heat transfer Optoelectronic devices Transient analysis
页码	51-52
中文摘要	The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE.
英文摘要	The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE.
收录类别	EI
会议录	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
语种	英语
ISSN号	2158-3234
ISBN号	9781467316040
内容类型	会议论文
源URL	[http://ir.iscas.ac.cn/handle/311060/15963]
专题	软件研究所_软件所图书馆_会议论文
推荐引用方式 GB/T 7714	Cheng Liwen,Sheng Yang,Chang Shengxia,et al. a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012.