The pressure-induced metallization of monoclinic vanadium dioxide

doi:10.1039/C6RA24084D

	The pressure-induced metallization of monoclinic vanadium dioxide
	Zhang, HF; Li, QJ; Cheng, BY; Guan, Z; Liu, R; Liu, B; Liu, ZX; Li, XD; Cui, T; Liu, BB
刊名	RSC ADVANCES
	2016
卷号	6 期号:107 页码:104949-104954
DOI	10.1039/C6RA24084D
英文摘要	In this study, the high-pressure behavior of monoclinic vanadium dioxide (VO2 (M-1)) was revisited using infrared reflectivity (IR) spectroscopy, Raman spectroscopy and in situ synchrotron X-ray diffraction (XRD) up to 64.7 GPa. Upon compression, VO2 (M-1) follows the expected the structure transition sequence, M-1 -> M'(1) -> X, and we found that the structural transition from M'(1) to X phase is completed at about 59 GPa. Moreover, our IR data demonstrated that the M'(1) phase is a semiconductor within the pressure region of 11.4-43.2 GPa and became metallic with further compression, and that the X phase is metallic. Further analysis suggests that the pressure-induced metallization (PIM) of the M'(1) phase is associated with electron-electron correlations, while the PIM from the M'(1) to the X phases is relate to structural phase transitions. These results provide further insight into the PIM of VO2(M-1).
语种	英语
WOS记录号	WOS:000388116500001
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/260419]
专题	中国科学院高能物理研究所
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhang, HF,Li, QJ,Cheng, BY,et al. The pressure-induced metallization of monoclinic vanadium dioxide[J]. RSC ADVANCES,2016,6(107):104949-104954.
APA	Zhang, HF.,Li, QJ.,Cheng, BY.,Guan, Z.,Liu, R.,...&李晓东.(2016).The pressure-induced metallization of monoclinic vanadium dioxide.RSC ADVANCES,6(107),104949-104954.
MLA	Zhang, HF,et al."The pressure-induced metallization of monoclinic vanadium dioxide".RSC ADVANCES 6.107(2016):104949-104954.