Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon

doi:10.1007/s11664-016-4698-8

	Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon
	Wang, BY; Zhang P(张鹏); Cao XZ(曹兴忠); Wang BY(王宝义); Wang, Z; Yang, L; Zhang, LZ; Shi, SB; Zhang, P; Cao, XZ
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2016
卷号	45 期号:10 页码:5064-5068
关键词	Platelet cavity H implantation silicon
DOI	10.1007/s11664-016-4698-8
英文摘要	Cz n-type Si (100) wafers are implanted with 190 keV O and 40 keV H ions in different implantation sequences. Cross sectional transmission electron microscopy and slow positron annihilation spectroscopy are used to study the formation and evolution of micro-defects. Our results clearly show that the defect morphology depends strongly on the implantation sequence. Large cavities are observed in O preimplanted samples, while only platelets are observed in H preimplanted samples. The change regularity of the S parameter is the same for the Si samples co-implanted at different sequences. But in H preimplanted samples, the S parameter is a little higher. The effects of the implantation sequence on the micro-defects have been discussed in combination with H and O implantation-induced defects as well as their interactions upon annealing.
语种	英语
WOS记录号	WOS:000382585400048
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/260315]
专题	中国科学院高能物理研究所
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Wang, BY,Zhang P,Cao XZ,et al. Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(10):5064-5068.
APA	Wang, BY.,张鹏.,曹兴忠.,王宝义.,Wang, Z.,...&Cao, XZ.(2016).Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon.JOURNAL OF ELECTRONIC MATERIALS,45(10),5064-5068.
MLA	Wang, BY,et al."Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon".JOURNAL OF ELECTRONIC MATERIALS 45.10(2016):5064-5068.