Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3

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	Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3
	Zhang, LD; Ye, XS; Sha, J; Jiao, ZK; Chen, B; Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
刊名	CHINESE SCIENCE BULLETIN
	1999
卷号	44 期号:2 页码:186-189
关键词	Amorphous-silicon Nitride
ISSN号	1001-6538
英文摘要	The measurements of electric capacities and dielectric loss angles for nanocrystalline gamma-Fe2O3 under air and vacuum atmospheres have been conducted by using ac LRC method, and the conductivity and the polarization relaxation time have also been calculated from the frequency spectra of real and imaginary parts of the dielectric constants. The anomalous dielectric behavior implies the existence of two kinds of polarization mechanisms with different relaxation times, which are caused by the defects and the dangling bonds in the interlaces, respectively. The experimental and calculated results indicated that the polarization loss and thf! conductance loss are dominant in air atmosphere and vacuum, respectively.
学科主题	Physics
URL标识	查看原文
WOS记录号	WOS:000079243000024
公开日期	2012-08-29
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/12203]
专题	理论物理研究所_理论物理所1978-2010年知识产出
通讯作者	Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, LD,Ye, XS,Sha, J,et al. Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3[J]. CHINESE SCIENCE BULLETIN,1999,44(2):186-189.
APA	Zhang, LD,Ye, XS,Sha, J,Jiao, ZK,Chen, B,&Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China..(1999).Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3.CHINESE SCIENCE BULLETIN,44(2),186-189.
MLA	Zhang, LD,et al."Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3".CHINESE SCIENCE BULLETIN 44.2(1999):186-189.