FLUX PHASE AND DOPING DEPENDENCE OF ANTIFERROMAGNETISM IN COPPER-OXIDE COMPOUNDS

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	FLUX PHASE AND DOPING DEPENDENCE OF ANTIFERROMAGNETISM IN COPPER-OXIDE COMPOUNDS
	FENG, SP
刊名	PHYSICA C
	1994
卷号	232 期号:40910 页码:119-126
关键词	Valence-bond State Mean-field-theory T-j-model Spin-liquid State Heisenberg-model Hubbard-model Doped Antiferromagnet Momentum Distribution Square Lattice Wave-functions
ISSN号	0921-4534
英文摘要	The ground-state properties of copper oxide compounds are studied by using the fermion-spin transformation. At half-filling, there are many possible phases for the 2D Heisenberg model and the mean-field state with the lowest energy is the magnetized pi-flux state. It is shown that the mean-field ground state of the 2D XY model is a uniform pi-flux phase with no staggered antiferromagnetic long-range order, and a reasonable result is also obtained for the 2D anisotropic Heisenberg model. In the mean-field level, the quantum fluctuation and frustration of spins can be considered by introducing the next-nearest-neighbor magnetic exchange interaction J', the antiferromagnetic long-range order is destroyed at half-fitting within the J-J' model where the value of J' is larger than the critical value J'(c) = 0.24J. Away from half-filling, the antiferromagnetic long-range order is destroyed for a hole concentration less than approximately 4.3%-7% for reasonable values of the parameters J'/J = 0.05 and t/J = 3-5 within the t-J-J' model, which is in good agreement with the experiments on copper oxide superconductors.
学科主题	Physics
URL标识	查看原文
公开日期	2012-08-29
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/11844]
专题	理论物理研究所_理论物理所1978-2010年知识产出
推荐引用方式 GB/T 7714	FENG, SP. FLUX PHASE AND DOPING DEPENDENCE OF ANTIFERROMAGNETISM IN COPPER-OXIDE COMPOUNDS[J]. PHYSICA C,1994,232(40910):119-126.
APA	FENG, SP.(1994).FLUX PHASE AND DOPING DEPENDENCE OF ANTIFERROMAGNETISM IN COPPER-OXIDE COMPOUNDS.PHYSICA C,232(40910),119-126.
MLA	FENG, SP."FLUX PHASE AND DOPING DEPENDENCE OF ANTIFERROMAGNETISM IN COPPER-OXIDE COMPOUNDS".PHYSICA C 232.40910(1994):119-126.