Effects of Non-ideal Switches on Speed of SC Integrator

CORC > 沈阳自动化研究所 > 中国科学院沈阳自动化研究所 > 光电信息技术研究室

	Effects of Non-ideal Switches on Speed of SC Integrator
	Xu BS(徐保树); Shi ZL(史泽林); Wang X(王霄); Zhao YH(赵耀宏)
	2016
会议名称	2016 13th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
会议日期	October 25-28, 2016
会议地点	Hangzhou, China
关键词	Switch switched capacitor(SC) integrator dynamic error(DE) optimization
页码	1-3
通讯作者	Wang X(王霄)
中文摘要	This paper presents a method with which the switches in the classical switched capacitor(SC) integrator can be optimized to achieve smallest layout area in the meanwhile maintaining circuit speed within demand. After introduction of structure and function of the SC integrator that is composed of capacitors, switches and op amp, the reason why switches involved should be optimized is given that is due to the noneideal factors of switch. The method at first calculates the maximum on-resistance of a CMOS switch in accordance with speed specification, then the width and length of channel of the PMOS and NMOS involved in a CMOS switch are obtained through numerical simulations by HSPICE. The results show that a switch should be designed with 0.3μm/0.35μm for PMOS and NMOS, respectively, to achieve smallest layout area for the SC integrator implemented by TSMC 0.18 um Mixed Signal SALICIDE technology.
产权排序	1
会议录	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings
会议录出版者	IEEE
会议录出版地	New York
语种	英语
ISBN号	978-1-4673-9719-3
内容类型	会议论文
源URL	[http://ir.sia.cn/handle/173321/21054]
专题	沈阳自动化研究所_光电信息技术研究室
作者单位	1.Shenyang Institute of Automation, Chinese Academy of Sciences 2.Key Laboratory of Opto-Electronic Information Processing, Chinese Academy of Sciences, Shenyang 110016, China 3.University of the Chinese Academy of Sciences
推荐引用方式 GB/T 7714	Xu BS,Shi ZL,Wang X,et al. Effects of Non-ideal Switches on Speed of SC Integrator[C]. 见:2016 13th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016. Hangzhou, China. October 25-28, 2016.