Reliability-Based ECC System for Adaptive Protection of NAND Flash Memories

doi:10.1109/CSNT.2015.23

CORC > 自动化研究所 > 中国科学院自动化研究所 > 综合信息系统研究中心

	Reliability-Based ECC System for Adaptive Protection of NAND Flash Memories
	Yuan L(袁柳); Liu HD(刘怀达); Jia PG(贾品贵); Yang YP(杨一平)
	2015
会议日期	2015-04-04 - 2015-04-06
会议地点	Gwalior, 印度
关键词	Error Correcting Code(Ecc) Flash Memories Error Patterns Reliability Fault Tolerant
DOI	10.1109/CSNT.2015.23
页码	897 - 902
英文摘要	In order to make the implementation of the error correcting code(ECC) efficiently, it should be tailored individually to each block, and can be changed over time as the running condition changes. The combined effect of reliability factors makes it difficult to select ECC by considering the effect factors separately. So more appropriate ECC selection method need to be found. Meanwhile, most of the ECCs are designed to adapt to specific hardware, the implementation of the ECC needs to be redesigned when the hardware platform changes. So the introduction of commonly used ECC system can provide a great convenience for error correction. In this paper, we propose an easy-to-use and flexible ECC system which takes advantage of the reliability map to provide adaptive protection. Proposed ECC system comprises ECC selection module and ECC codec module. A method to select appropriate ECC based on reliability map which provides the evaluation of bit error rate is proposed in ECC selection module. ECC encoder and decoder suit are called in ECC codec module to provide various protection. Proposed system can be used in many platforms, such as DSP, ARM, etc. Compared with the early works, the uncorrectable bit error rate(UBER) performance, coding time and redundancy are all optimized by proposed ECC system.
会议录	2015 Fifth International Conference on Communication Systems and Network Technologies (CSNT)
学科主题	工科
语种	英语
内容类型	会议论文
源URL	[http://ir.ia.ac.cn/handle/173211/11453]
专题	自动化研究所_综合信息系统研究中心
作者单位	中国科学院自动化研究所
推荐引用方式 GB/T 7714	Yuan L,Liu HD,Jia PG,et al. Reliability-Based ECC System for Adaptive Protection of NAND Flash Memories[C]. 见:. Gwalior, 印度. 2015-04-04 - 2015-04-06.