Layer-independent and layer-dependent nonlinear optical properties of two-dimensional GaX (X = S, Se, Te) nanosheets | |
Hu, Lei1,2; Huang, Xuri1; Wei, Dongshan2 | |
刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS |
2017-05-14 | |
卷号 | 19期号:18页码:11131-11141 |
ISSN号 | 1463-9076 |
DOI | 10.1039/c7cp00578d |
通讯作者 | Huang, XR (reprint author), Jilin Univ, Int Joint Res Lab Nanomicro Architecture Chem, Inst Theoret Chem, Changchun 130023, Peoples R China. ; Wei, DS (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China. |
英文摘要 | Recently researchers have found that the non-resonant second-harmonic generation (SHG) intensity of the GaSe monolayer (ML) is the strongest among all two-dimensional (2D) atomic layered crystals. Here we perform a systematic first-principles study of the SHG coefficient of GaX (X = S, Se, Te) monolayers (MLs) and few-layers. We find that the non-resonant SHG intensity of the GaS ML can be comparable with that of the GaSe ML, while the non-resonant SHG intensity of the GaTe ML is much stronger than that of the GaSe ML. Furthermore, the magnitudes of SHG coefficients of the few-layers exfoliated from bulk epsilon-GaSe and newly constructed N-1-GaSe crystals are very close to that of the GaSe ML, showing no dependence on the layer number. The magnitude of the SHG coefficient of the trilayer exfoliated from the bulk beta-GaSe crystals is around 1/3 of that of the GaSe ML, decreasing rapidly with the layer number. This study indicates that a strong SHG response can be obtained in a wide range of monolayers and few-layers. Moreover, we point out that one can identify the layer number and the stacking sequence of 2D nanosheets by measuring their elastic constants and SHG coefficients. |
资助项目 | national nature Science foundation of China[21373099] ; national nature Science foundation of China[21573090] ; Jilin Province Science and Technology Development Plan[20150101005JC] ; Ministry of Education of China[20130061110020] ; National 973 Program of China[2015CB755401] |
WOS研究方向 | Chemistry ; Physics |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
WOS记录号 | WOS:000401022300017 |
内容类型 | 期刊论文 |
源URL | [http://172.16.51.4:88/handle/2HOD01W0/229] |
专题 | 太赫兹技术研究中心 |
通讯作者 | Huang, Xuri; Wei, Dongshan |
作者单位 | 1.Jilin Univ, Int Joint Res Lab Nanomicro Architecture Chem, Inst Theoret Chem, Changchun 130023, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China |
推荐引用方式 GB/T 7714 | Hu, Lei,Huang, Xuri,Wei, Dongshan. Layer-independent and layer-dependent nonlinear optical properties of two-dimensional GaX (X = S, Se, Te) nanosheets[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2017,19(18):11131-11141. |
APA | Hu, Lei,Huang, Xuri,&Wei, Dongshan.(2017).Layer-independent and layer-dependent nonlinear optical properties of two-dimensional GaX (X = S, Se, Te) nanosheets.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,19(18),11131-11141. |
MLA | Hu, Lei,et al."Layer-independent and layer-dependent nonlinear optical properties of two-dimensional GaX (X = S, Se, Te) nanosheets".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 19.18(2017):11131-11141. |
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