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	Microscopic study of thermoelectric In-doped SnTe
	Nan,Pengfei1,2; Liu,Ruibin1; Chang,Yunjie2; Wu,Hongbo1; Wang,Yumei2; Yu,Richeng2; Shen,Jun3; Guo,Wei1; Ge,Binghui2
刊名	Nanotechnology
	2018-04-27
卷号	29期号:26
关键词	inversion domain SnTe HAADF geometry phase analysis
ISSN号	0957-4484
DOI	10.1088/1361-6528/aabb0f
英文摘要	Abstract SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:0957-4484-29-26-AABB0F
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/6306]
专题	微纳制造与系统集成研究中心
作者单位	1.Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China 2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 3.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People’s Republic of China
推荐引用方式 GB/T 7714	Nan,Pengfei,Liu,Ruibin,Chang,Yunjie,et al. Microscopic study of thermoelectric In-doped SnTe[J]. Nanotechnology,2018,29(26).
APA	Nan,Pengfei.,Liu,Ruibin.,Chang,Yunjie.,Wu,Hongbo.,Wang,Yumei.,...&Ge,Binghui.(2018).Microscopic study of thermoelectric In-doped SnTe.Nanotechnology,29(26).
MLA	Nan,Pengfei,et al."Microscopic study of thermoelectric In-doped SnTe".Nanotechnology 29.26(2018).

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