Triethanolamine doped multilayer MoS2 field effect transistors | |
Ryu, Min-Yeul1; Jang, Ho-Kyun1; Lee, Kook Jin1; Piao, Mingxing2; Ko, Seung-Pil1; Shin, Minju1; Huh, Junghwan1; Kim, Gyu-Tae1 | |
刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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2017-05-28 | |
卷号 | 19期号:20页码:13133-13139 |
ISSN号 | 1463-9076 |
DOI | 10.1039/c7cp00589j |
英文摘要 | Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be similar to 30 cm(2) V-1 s(-1) after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme. |
WOS研究方向 | Chemistry ; Physics |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
WOS记录号 | WOS:000402072100056 |
内容类型 | 期刊论文 |
源URL | [http://172.16.51.4:88/handle/2HOD01W0/222] ![]() |
专题 | 微纳制造与系统集成研究中心 |
作者单位 | 1.Korea Univ, Sch Elect Engn, Seoul 02481, South Korea 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Beijing, Peoples R China |
推荐引用方式 GB/T 7714 | Ryu, Min-Yeul,Jang, Ho-Kyun,Lee, Kook Jin,et al. Triethanolamine doped multilayer MoS2 field effect transistors[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2017,19(20):13133-13139. |
APA | Ryu, Min-Yeul.,Jang, Ho-Kyun.,Lee, Kook Jin.,Piao, Mingxing.,Ko, Seung-Pil.,...&Kim, Gyu-Tae.(2017).Triethanolamine doped multilayer MoS2 field effect transistors.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,19(20),13133-13139. |
MLA | Ryu, Min-Yeul,et al."Triethanolamine doped multilayer MoS2 field effect transistors".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 19.20(2017):13133-13139. |
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