Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling

doi:10.1039/c6nr05638e

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 量子信息技术研究中心

	Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling
	Zhao, Hong-Quan1 ; Mao, Xin 2; Zhou, Dahua1 ; Feng, Shuanglong1 ; Shi, Xuan1 ; Ma, Yong 1; Wei, Xingzhan1 ; Mao, Yuliang 2
刊名	NANOSCALE
	2016
卷号	8 期号:45 页码:18995-19003
ISSN号	2040-3364
DOI	10.1039/c6nr05638e
通讯作者	Zhao, HQ ; Zhou, DH ; Feng, SL (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Beijing, Peoples R China. ; Mao, YL (reprint author), Xiangtan Univ, Sch Phys & Optoelect Engn, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.
英文摘要	We developed a non-mechanical straining method to simultaneously modulate the bandgap and photoluminescence (PL) quantum efficiency of a synthesized molybdenum disulfide (MoS2) monolayer on SiO2, by vacuum annealing and subsequent quick cooling in ethanol. Influences of the thermal treatments at different temperatures from 100 degrees C to 600 degrees C on the PL and Raman spectra of the MoS2 monolayers are reported. A maximum PL peak intensity, twice that of the untreated counterparts under the same measurement conditions, was observed at the treating temperature of 200 degrees C. At the same time, approximately permanent tensile strains were induced, due to the quick cooling from high temperatures, which led to a red-shift of the direct optical bandgap. Modulation of the bandgap was achieved by changing the treating temperatures; nearly linear PL and Raman frequency shifts of similar to 3.82 meV per 100 degrees C and similar to-0.28 cm(-1)/100 degrees C for A exciton photoluminescence and Raman E-2g(1) mode frequency were observed, respectively. The proposed thermal modulation promises a wide range of applications in functional 2D nanodevices and semiconductors. To our knowledge, our findings constitute the first demonstration of thermal engineering by combinational manipulation of annealing and quick cooling of the 2D transitionmetal dichalcogenides.
资助项目	Chongqing Science and Technology Commission[cstc2013jcyjC40001] ; Chongqing institute of green and intelligent technology, Chinese academy of sciences[Y41Z030W10] ; state key joint laboratory of integrated optoelectronics, China[IOSKL2013KF06] ; national natural science foundation of China[11374251] ; national natural science foundation of China[11471280] ; national natural science foundation of China[11547105] ; CAS "Light of West China" Program
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000387859800022
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/3059]
专题	量子信息技术研究中心微纳制造与系统集成研究中心
通讯作者	Zhao, Hong-Quan; Zhou, Dahua; Feng, Shuanglong; Mao, Yuliang
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Beijing, Peoples R China 2.Xiangtan Univ, Sch Phys & Optoelect Engn, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Hong-Quan,Mao, Xin,Zhou, Dahua,et al. Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling[J]. NANOSCALE,2016,8(45):18995-19003.
APA	Zhao, Hong-Quan.,Mao, Xin.,Zhou, Dahua.,Feng, Shuanglong.,Shi, Xuan.,...&Mao, Yuliang.(2016).Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling.NANOSCALE,8(45),18995-19003.
MLA	Zhao, Hong-Quan,et al."Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling".NANOSCALE 8.45(2016):18995-19003.