Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes
Li, Yi1,2; Zhu, Jun2; Chen, Shuanghong2; Liu, Feng2; Lv, Mei2; Wei, Junfeng2; Huang, Yang2; Huo, Zhipeng2; Hu, Linhua2; Tang, Junwang3
刊名JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
2016-06-01
卷号16期号:6页码:5719-5723
关键词Solar Cells Semiconductor Bivo4 Sensitizer
DOI10.1166/jnn.2016.12062
文献子类Article
英文摘要Low cost, stable and visible-light-responsive bismuth vanadate (BiVO4) was used as the light absorbing material to fabricate a low bandgap oxide solar cell on mesoporous SnO2 photoanode. BiVO4 nanoparticles were grown on the mesoporous SnO2 films employing successive ionic layer adsorption and reaction process. The optimized BiVO4 solar cell shows an incident photon to current conversion efficiency of more than 60% at a wide range of visible region (350 nm-450 nm), leading to a power conversion efficiency of 0.56% at AM1.5, 100 mW . cm(-2). This result provides important insights into the low cost and robust oxide solar cells.
WOS关键词BIVO4 ; DYE ; CRYSTAL ; FILMS ; OXIDE
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000386123900041
资助机构National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; 21173228 ; 21173228 ; 21173228 ; 21173228 ; 21103197 ; 21103197 ; 21103197 ; 21103197 ; 61204075 ; 61204075 ; 61204075 ; 61204075 ; 61404142) ; 61404142) ; 61404142) ; 61404142) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; 21173228 ; 21173228 ; 21173228 ; 21173228 ; 21103197 ; 21103197 ; 21103197 ; 21103197 ; 61204075 ; 61204075 ; 61204075 ; 61204075 ; 61404142) ; 61404142) ; 61404142) ; 61404142)
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/30156]  
专题合肥物质科学研究院_应用技术研究所
作者单位1.Univ Sci & Technol China, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
3.UCL, Dept Chem Engn, London WC1E 7JE, England
4.North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
推荐引用方式
GB/T 7714
Li, Yi,Zhu, Jun,Chen, Shuanghong,et al. Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2016,16(6):5719-5723.
APA Li, Yi.,Zhu, Jun.,Chen, Shuanghong.,Liu, Feng.,Lv, Mei.,...&Dai, Songyuan.(2016).Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,16(6),5719-5723.
MLA Li, Yi,et al."Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16.6(2016):5719-5723.
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