Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric | |
Lei, B.1,2,3; Wang, N. Z.1,2,3; Shang, C.1,2,3; Meng, F. B.1,2,3; Ma, L. K.1,2,3; Luo, X. G.1,2,3,4; Wu, T.1,2,3,4; Sun, Z.4,5![]() | |
刊名 | PHYSICAL REVIEW B
![]() |
2017-01-30 | |
卷号 | 95期号:2 |
DOI | 10.1103/PhysRevB.95.020503 |
文献子类 | Article |
英文摘要 | We have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with T-c similar to 46.6 K for optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, by using a solid ion conductor as the gate dielectric, the SIC-FET device is able to induce much higher carrier doping in the bulk, suit many surface-sensitive experimental probes, and stabilize structural phases that are inaccessible in ordinary conditions. |
WOS关键词 | SINGLE-LAYER FESE ; HIGH-TEMPERATURE SUPERCONDUCTIVITY ; INSULATOR-TRANSITION ; ELECTRONIC ORIGIN ; GROUND-STATE ; FILMS ; METAL ; MOS2 |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000400593700001 |
资助机构 | National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; National Natural Science Foundation of China(11190021 ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; Chinese Academy of Sciences(XDB04040100) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; National Key R&D Program of the MOST of China(2016YFA0300201) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; Hefei Science Center CAS(2016HSC-IU001) ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11227902 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 11534010 ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/33498] ![]() |
专题 | 合肥物质科学研究院_中科院强磁场科学中心 |
作者单位 | 1.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 2.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 3.Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China 4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China 5.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China 6.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 8.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 9.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 10.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China |
推荐引用方式 GB/T 7714 | Lei, B.,Wang, N. Z.,Shang, C.,et al. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric[J]. PHYSICAL REVIEW B,2017,95(2). |
APA | Lei, B..,Wang, N. Z..,Shang, C..,Meng, F. B..,Ma, L. K..,...&Chen, X. H..(2017).Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric.PHYSICAL REVIEW B,95(2). |
MLA | Lei, B.,et al."Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric".PHYSICAL REVIEW B 95.2(2017). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论