Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces" Reply

doi:10.1103/PhysRevLett.118.239602

	Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces" Reply
	Fan, J.2; Verstraete, M. J.5,6; Zanolli, Z.1,7,8,9; Yang, X. B.10; Tong, S. Y.2,11; Xu, H.2; Zhao, J. Z.3; Fan, W.4
刊名	PHYSICAL REVIEW LETTERS
	2017-06-09
卷号	118
DOI	10.1103/PhysRevLett.118.239602
语种	英语
WOS记录号	WOS:000402979400021
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/152247]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
作者单位	1.Forschungszentrum Julich, Peter Grunberg Inst PGI 1, D-52425 Julich, Germany 2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 4.RIKEN, Computat Condensed Matter Phys Lab, Wako, Saitama 3510198, Japan 5.Univ Liege, Dept Phys, B-4000 Liege, Belgium 6.Univ Liege, European Theoret Spect Facil, B-4000 Liege, Belgium 7.Forschungszentrum Julich, Inst Adv Simulat IAS 1, D-52425 Julich, Germany 8.Rhein Westfal TH Aachen, Instg Theoret Solid State Phys, D-52056 Aachen, Germany 9.Rhein Westfal TH Aachen, European Theoret Spect Facil ETSF, D-52056 Aachen, Germany 10.South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Fan, J.,Verstraete, M. J.,Zanolli, Z.,et al. Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces" Reply[J]. PHYSICAL REVIEW LETTERS,2017,118.
APA	Fan, J..,Verstraete, M. J..,Zanolli, Z..,Yang, X. B..,Tong, S. Y..,...&Fan, W..(2017).Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces" Reply.PHYSICAL REVIEW LETTERS,118.
MLA	Fan, J.,et al."Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces" Reply".PHYSICAL REVIEW LETTERS 118(2017).