Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

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	Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd
	Baojin Ren 1; Mian Liu 1; Xiaoguang Li 2,3; Xiaoying Qin 1; Di Li1 ; Tianhua Zou 1; Guolong Sun 1; Yuanyue Li 1; Hongxing Xin 1; Jian Zhang1
刊名	J. Mater. Chem. A,
	2015
卷号	3 期号:22 页码:11768-11772
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn/handle/334002/21332]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Science, 230031 Hefei, P. R. China. 2.Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, 230026 Hefei, P. R. China 3.Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
推荐引用方式 GB/T 7714	Baojin Ren,Mian Liu,Xiaoguang Li,et al. Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd[J]. J. Mater. Chem. A,,2015,3(22):11768-11772.
APA	Baojin Ren.,Mian Liu.,Xiaoguang Li.,Xiaoying Qin.,Di Li.,...&Jian Zhang.(2015).Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd.J. Mater. Chem. A,,3(22),11768-11772.
MLA	Baojin Ren,et al."Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd".J. Mater. Chem. A, 3.22(2015):11768-11772.