Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys

	Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys
	Wenqi Huang; Hong Yang; Buwen Cheng; Chunlai Xue
刊名	Phys. Chem. Chem. Phys.
	2017
卷号	19 页码:27031--27037
学科主题	光电子学
公开日期	2018-07-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28693]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Wenqi Huang,Hong Yang,Buwen Cheng,et al. Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys[J]. Phys. Chem. Chem. Phys.,2017,19:27031--27037.
APA	Wenqi Huang,Hong Yang,Buwen Cheng,&Chunlai Xue.(2017).Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.Phys. Chem. Chem. Phys.,19,27031--27037.
MLA	Wenqi Huang,et al."Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys".Phys. Chem. Chem. Phys. 19(2017):27031--27037.