Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys | |
Wenqi Huang; Hong Yang; Buwen Cheng; Chunlai Xue | |
刊名 | Phys. Chem. Chem. Phys.
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2017 | |
卷号 | 19页码:27031--27037 |
学科主题 | 光电子学 |
公开日期 | 2018-07-02 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/28693] ![]() |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Wenqi Huang,Hong Yang,Buwen Cheng,et al. Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys[J]. Phys. Chem. Chem. Phys.,2017,19:27031--27037. |
APA | Wenqi Huang,Hong Yang,Buwen Cheng,&Chunlai Xue.(2017).Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.Phys. Chem. Chem. Phys.,19,27031--27037. |
MLA | Wenqi Huang,et al."Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys".Phys. Chem. Chem. Phys. 19(2017):27031--27037. |
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