| Photodetectors based on junctions of two-dimensional transition metal dichalcogenides | |
| Xia Wei; Fa-Guang Yan; Chao Shen; Quan-Shan Lv; Kai-You Wang | |
| 刊名 | Chin. Phys. B
 |
| 2017 | |
| 卷号 | 26期号:3页码:038504 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-07-02 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28665]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xia Wei,Fa-Guang Yan,Chao Shen,et al. Photodetectors based on junctions of two-dimensional transition metal dichalcogenides[J]. Chin. Phys. B,2017,26(3):038504. |
| APA | Xia Wei,Fa-Guang Yan,Chao Shen,Quan-Shan Lv,&Kai-You Wang.(2017).Photodetectors based on junctions of two-dimensional transition metal dichalcogenides.Chin. Phys. B,26(3),038504. |
| MLA | Xia Wei,et al."Photodetectors based on junctions of two-dimensional transition metal dichalcogenides".Chin. Phys. B 26.3(2017):038504. |
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