Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 中科院强激光材料重点实验室

	Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation
	Zhao, Jiaoling; Wang, Hu; Shao, Jianda; Qi, Hongji; Wang, Bin
刊名	Opt. Commun.
	2017
卷号	387 页码:214
通讯作者	qhj@siom.ac.cn
英文摘要	Damage behavior of HfO2 and SiO2 films under subpicosecond irradiation is investigated experimentally and theoretically in this work. The typical damage phenomenon is the transition from isolated submicrometer pits to integral ablation at transitive threshold. The experimental damage thresholds for both coatings are consistent with the theoretical calculation. The rate equation considering the feedback effect of electron number density is applied to calculate the deposited energy density, which illustrates the evolution of damage morphology.
收录类别	SCI
资助信息	National Natural Science Foundation of China, China [61308021]
WOS记录号	WOS:000390597300035
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/28206]
专题	上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Zhao, Jiaoling,Wang, Hu,Shao, Jianda,et al. Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation[J]. Opt. Commun.,2017,387:214.
APA	Zhao, Jiaoling,Wang, Hu,Shao, Jianda,Qi, Hongji,&Wang, Bin.(2017).Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation.Opt. Commun.,387,214.
MLA	Zhao, Jiaoling,et al."Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation".Opt. Commun. 387(2017):214.