Influence of Annealing on Interface Diffusion and Anti-Chemica-Cleaning Property of Metal-Dielectric Multilayer Films | |
Cui Y(崔云); Ye BJ(叶邦角); Ge WN(葛雯娜); Li XT(李响潭); Hu GX(胡国行); Huang HP(黄昊鹏); Kong FY(孔钒宇); Jin YX(晋云霞); Zhang H(张洪) | |
刊名 | 中国激光
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2016 | |
卷号 | 43期号:10页码:1003002 |
通讯作者 | zhangustc@siom.ac.cn ; yxjin@siom.ac.cn |
中文摘要 | 对金属介质多层膜样品进行不同温度的退火处理。实验发现,当退火温度为350°C时,在样品Au层与 SiO_2层的界面处出现过渡层,样品具有很强的抗化学清洗能力。利用透射电子显微镜观测与能谱仪分析发现,过渡层的出现主要是Cr原子从Au层底部扩散到SiO_2层的结果。过渡层可以增强Au层与SiO_2层间的粘附力,阻挡酸溶液的渗入,使得金属介质多层膜的抗化学清洗能力得到增强。 |
英文摘要 | Samples of metal-dielectric multilayer films are post-annealed at different temperatures. It is experimentally found that at the annealing temperature of 350℃,a transition layer between Au layer and SiO_2 layer of the samples occurs, and these samples possess the strong anti-chemical-cleaning ability. Based on the investigation by a transmission electron microscope and the analysis by an energy dispersive spectrometer, it is found that the occurrence of transition layers is mainly the result of Cr atoms diffusing from the Au bottom layer to the SiO_2 layer. The transition layer can enhance the adhesion between the Au layer and SiO_2 layer and block the infiltration of acid solutions, thus the anti-chemical-cleaning ability of metal-dielectric multilayer films is enhanced. |
收录类别 | CSCD |
资助信息 | 国家自然科学基金 |
CSCD记录号 | CSCD:5829558 |
WOS记录号 | CSCD:5829558 |
内容类型 | 期刊论文 |
源URL | [http://ir.siom.ac.cn/handle/181231/28108] ![]() |
专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
作者单位 | 中国科学院上海光学精密机械研究所 |
推荐引用方式 GB/T 7714 | Cui Y,Ye BJ,Ge WN,et al. Influence of Annealing on Interface Diffusion and Anti-Chemica-Cleaning Property of Metal-Dielectric Multilayer Films[J]. 中国激光,2016,43(10):1003002. |
APA | 崔云.,叶邦角.,葛雯娜.,李响潭.,胡国行.,...&张洪.(2016).Influence of Annealing on Interface Diffusion and Anti-Chemica-Cleaning Property of Metal-Dielectric Multilayer Films.中国激光,43(10),1003002. |
MLA | 崔云,et al."Influence of Annealing on Interface Diffusion and Anti-Chemica-Cleaning Property of Metal-Dielectric Multilayer Films".中国激光 43.10(2016):1003002. |
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