Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 中科院强激光材料重点实验室

	Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
	Liu XZ(刘兴钊); Yue C(岳超); Zhang WL(张万里); Xia ZT(夏长泰)
刊名	Chin. Phys. B
	2016
卷号	25 期号:1
通讯作者	xzliu@uestc.edu.cn ; xia_ct@siom.ac.cn
英文摘要	High-resistivity beta-Ga2O3 thin films were grown on Si-doped n-type conductive beta-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10(6) Omega. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10(18) cm(-3) and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10(2)% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive beta-Ga2O3 thin films and the n-type conductive beta-Ga2O3 single-crystal substrate.
收录类别	SCI
资助信息	National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003]
WOS记录号	WOS:000368455100068
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/28030]
专题	上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Liu XZ,Yue C,Zhang WL,et al. Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer[J]. Chin. Phys. B,2016,25(1).
APA	刘兴钊,岳超,张万里,&夏长泰.(2016).Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer.Chin. Phys. B,25(1).
MLA	刘兴钊,et al."Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer".Chin. Phys. B 25.1(2016).