Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 强场激光物理国家重点实验室

	Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon
	Fan, Wen-Zhong; Huang, Yuan-Yuan; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong; Bai, Feng; Li, Hong-Jin
刊名	Chem. Phys. Lett.
	2016
卷号	662 页码:102
通讯作者	zqz@siom.ac.cn
英文摘要	We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved.
收录类别	SCI
资助信息	National Natural Science Foundation of China [61178024, 11374316]
WOS记录号	WOS:000386860900018
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/28691]
专题	上海光学精密机械研究所_强场激光物理国家重点实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Fan, Wen-Zhong,Huang, Yuan-Yuan,Pan, Huai-Hai,et al. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon[J]. Chem. Phys. Lett.,2016,662:102.
APA	Fan, Wen-Zhong.,Huang, Yuan-Yuan.,Pan, Huai-Hai.,Wang, Zhuo.,Wang, Cheng-Wei.,...&Li, Hong-Jin.(2016).Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon.Chem. Phys. Lett.,662,102.
MLA	Fan, Wen-Zhong,et al."Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon".Chem. Phys. Lett. 662(2016):102.