Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon | |
Fan, Wen-Zhong; Huang, Yuan-Yuan; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong; Bai, Feng; Li, Hong-Jin | |
刊名 | Chem. Phys. Lett.
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2016 | |
卷号 | 662页码:102 |
通讯作者 | zqz@siom.ac.cn |
英文摘要 | We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China [61178024, 11374316] |
WOS记录号 | WOS:000386860900018 |
内容类型 | 期刊论文 |
源URL | [http://ir.siom.ac.cn/handle/181231/28691] ![]() |
专题 | 上海光学精密机械研究所_强场激光物理国家重点实验室 |
作者单位 | 中国科学院上海光学精密机械研究所 |
推荐引用方式 GB/T 7714 | Fan, Wen-Zhong,Huang, Yuan-Yuan,Pan, Huai-Hai,et al. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon[J]. Chem. Phys. Lett.,2016,662:102. |
APA | Fan, Wen-Zhong.,Huang, Yuan-Yuan.,Pan, Huai-Hai.,Wang, Zhuo.,Wang, Cheng-Wei.,...&Li, Hong-Jin.(2016).Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon.Chem. Phys. Lett.,662,102. |
MLA | Fan, Wen-Zhong,et al."Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon".Chem. Phys. Lett. 662(2016):102. |
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