Electron mobility of inverted InAs/GaSb quantum well structure | |
Wenjun Huang; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Chengcheng Zhao; Xiaolu Guo | |
刊名 | Solid State Communications
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2017 | |
卷号 | 267页码:29-32 |
学科主题 | 半导体材料 |
公开日期 | 2018-05-23 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/28315] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Wenjun Huang,Wenquan Ma,Jianliang Huang,et al. Electron mobility of inverted InAs/GaSb quantum well structure[J]. Solid State Communications,2017,267:29-32. |
APA | Wenjun Huang.,Wenquan Ma.,Jianliang Huang.,Yanhua Zhang.,Yulian Cao.,...&Xiaolu Guo.(2017).Electron mobility of inverted InAs/GaSb quantum well structure.Solid State Communications,267,29-32. |
MLA | Wenjun Huang,et al."Electron mobility of inverted InAs/GaSb quantum well structure".Solid State Communications 267(2017):29-32. |
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