Electron mobility of inverted InAs/GaSb quantum well structure

	Electron mobility of inverted InAs/GaSb quantum well structure
	Wenjun Huang; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Chengcheng Zhao; Xiaolu Guo
刊名	Solid State Communications
	2017
卷号	267 页码:29-32
学科主题	半导体材料
公开日期	2018-05-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28315]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wenjun Huang,Wenquan Ma,Jianliang Huang,et al. Electron mobility of inverted InAs/GaSb quantum well structure[J]. Solid State Communications,2017,267:29-32.
APA	Wenjun Huang.,Wenquan Ma.,Jianliang Huang.,Yanhua Zhang.,Yulian Cao.,...&Xiaolu Guo.(2017).Electron mobility of inverted InAs/GaSb quantum well structure.Solid State Communications,267,29-32.
MLA	Wenjun Huang,et al."Electron mobility of inverted InAs/GaSb quantum well structure".Solid State Communications 267(2017):29-32.