Atomistic study of the copper cluster deposition on Si(001) and Si(111) surface

	Atomistic study of the copper cluster deposition on Si(001) and Si(111) surface
	Gong, Hengfeng; Li, Gongping; Zhang, Shixu; Lu, Wei; Wang, Lumin
	2016
会议名称	Chinese Materials Congress on Methods of Design and Characterization of Materials, Research and Development of Technological Processes, 2015
会议日期	July 10, 2015 - July 14, 2015
会议地点	Guiyang, China
关键词	Silicon Characterization Deposition Film growth Interfaces (materials) Mixing Molecular dynamics Morse potential Silicides Substrates Surface segregation Cluster Cluster deposition Crystallographic orientations Epitaxial relations Film-substrate interfaces Molecular dynamics simulations Silicide formation Silicon segregation
卷号	850
页码	287-298
会议录	Materials Science Forum
会议录出版地	Zurich-Durnten
学科主题	Physical Chemistry;Chemical Operations; Chemical Products Generally; Relativity;Atomic and Molecular Physics; Materials Science
语种	英语
ISSN号	0255-5476
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184947]
专题	核科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Gong, Hengfeng,Li, Gongping,Zhang, Shixu,et al. Atomistic study of the copper cluster deposition on Si(001) and Si(111) surface[C]. 见:Chinese Materials Congress on Methods of Design and Characterization of Materials, Research and Development of Technological Processes, 2015. Guiyang, China. July 10, 2015 - July 14, 2015.