Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes | |
Liu, Y; Yang, YC | |
刊名 | CHINESE PHYSICS B |
2016-05 | |
卷号 | 25期号:5页码:058101-1-058101-5 |
关键词 | light emitting diodes droop Mg doping |
ISSN号 | 1674-1056 |
通讯作者 | Yang, YC (reprint author), Lanzhou Univ, Sch Resource & Environm Sci, Lanzhou 730000, Peoples R China. ; Yang, YC (reprint author), Key Lab West Chinas Enviromental Sci, Lanzhou 730000, Peoples R China. |
学科主题 | Physics |
出版地 | BRISTOL |
语种 | 英语 |
WOS记录号 | WOS:000375681800067 |
内容类型 | 期刊论文 |
源URL | [http://ir.lzu.edu.cn/handle/262010/182306] |
专题 | 资源环境学院_期刊论文 |
推荐引用方式 GB/T 7714 | Liu, Y,Yang, YC. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes[J]. CHINESE PHYSICS B,2016,25(5):058101-1-058101-5. |
APA | Liu, Y,&Yang, YC.(2016).Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes.CHINESE PHYSICS B,25(5),058101-1-058101-5. |
MLA | Liu, Y,et al."Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes".CHINESE PHYSICS B 25.5(2016):058101-1-058101-5. |
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