Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application

	Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application
	Li, Y.T.; Long, S.B.; Lv, H.B.; Liu, Q.; Wang, M.; Xie, H.W.; Zhang, K.W.; Yang, X.Y.; Liu, M.
	2013
会议名称	2013 5th IEEE International Memory Workshop, IMW 2013
会议日期	May 26, 2013 - May 29, 2013
会议地点	Monterey, CA, United states
关键词	Random access storage Schottky barrier diodes Switching systems 1D1R Combined tio Non-volatile memory application Resistive switching Reverse bias RRAM Schottky diodes TiO
页码	184-187
会议录	2013 5th IEEE International Memory Workshop, IMW 2013
会议录出版地	Washington, DC
学科主题	Telecommunication; Radar, Radio and Television; Telephone Systems and Related Technologies; Line Communications
语种	英语
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184836]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Li, Y.T.,Long, S.B.,Lv, H.B.,et al. Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application[C]. 见:2013 5th IEEE International Memory Workshop, IMW 2013. Monterey, CA, United states. May 26, 2013 - May 29, 2013.