Reduced perssure-chemical vapor deposition of high quality Ge layers on SiGe/Si superlayers for microelectronics and optoelectronics purposes | |
Chen, Da; Xue, Zhongying; Liu, Su; Zhang, Miao | |
2012 | |
会议名称 | 4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting |
会议日期 | May 6, 2012 - May 10, 2012 |
会议地点 | Seattle, WA, United states |
关键词 | Germanium Chemical vapor deposition Graphene Microelectronics Nanowires Silicon Substrates Thick films Vapors Conventional approach High growth temperatures High quality Low temperatures Reduced pressure chemical vapor deposition Si process SiGe/Si Superlayers Tensile-strain configuration |
卷号 | 45 |
期号 | 4 |
页码 | 83-88 |
通讯作者 | Zhang, M. |
会议录 | ECS Transactions
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会议录出版地 | PENNINGTON |
学科主题 | Chemical Products Generally;Chemical Reactions; Nanotechnology; Electronic Circuits; Electronic Components and Tubes |
语种 | 英语 |
ISSN号 | 1938-5862 |
内容类型 | 会议论文 |
源URL | [http://ir.lzu.edu.cn/handle/262010/184830] ![]() |
专题 | 物理科学与技术学院_会议论文 |
推荐引用方式 GB/T 7714 | Chen, Da,Xue, Zhongying,Liu, Su,et al. Reduced perssure-chemical vapor deposition of high quality Ge layers on SiGe/Si superlayers for microelectronics and optoelectronics purposes[C]. 见:4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting. Seattle, WA, United states. May 6, 2012 - May 10, 2012. |
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