Reduced perssure-chemical vapor deposition of high quality Ge layers on SiGe/Si superlayers for microelectronics and optoelectronics purposes

	Reduced perssure-chemical vapor deposition of high quality Ge layers on SiGe/Si superlayers for microelectronics and optoelectronics purposes
	Chen, Da; Xue, Zhongying; Liu, Su; Zhang, Miao
	2012
会议名称	4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting
会议日期	May 6, 2012 - May 10, 2012
会议地点	Seattle, WA, United states
关键词	Germanium Chemical vapor deposition Graphene Microelectronics Nanowires Silicon Substrates Thick films Vapors Conventional approach High growth temperatures High quality Low temperatures Reduced pressure chemical vapor deposition Si process SiGe/Si Superlayers Tensile-strain configuration
卷号	45
期号	4
页码	83-88
通讯作者	Zhang, M.
会议录	ECS Transactions
会议录出版地	PENNINGTON
学科主题	Chemical Products Generally;Chemical Reactions; Nanotechnology; Electronic Circuits; Electronic Components and Tubes
语种	英语
ISSN号	1938-5862
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184830]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Chen, Da,Xue, Zhongying,Liu, Su,et al. Reduced perssure-chemical vapor deposition of high quality Ge layers on SiGe/Si superlayers for microelectronics and optoelectronics purposes[C]. 见:4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting. Seattle, WA, United states. May 6, 2012 - May 10, 2012.