Simulation of retention characteristics for metal nanocrystal nonvolatile memory with a modified direct tunneling model

	Simulation of retention characteristics for metal nanocrystal nonvolatile memory with a modified direct tunneling model
	Li, Yingtao; Liu, Ming; Long, Shibing; Wang, Qin; Liu, Qi; Zhang, Sen; Wang, Yan; Zuo, Qingyun; Liu, Su
	2009
会议名称	ISTC/CSTIC 2009 (CISTC)
会议日期	March 19, 2009 - March 20, 2009
会议地点	Shanghai, China
关键词	Nanocrystals Band structure Coulomb blockade Metals Quantum confinement Tunneling (excavation) Wind tunnels Barrier heights Coulomb blockade effects Coverage ratio Dielectric constants Direct tunneling Energy band Experimental data Metal nanocrystals Numerical calculation Quantum confinement effects Retention characteristics Simulation result Tunneling dielectrics
卷号	18
期号	1 PART 1
页码	141-148
通讯作者	Liu, M.
会议录	ECS Transactions
会议录出版地	PENNINGTON
学科主题	Crystalline Solids;Atomic and Molecular Physics; Nanotechnology; Metallurgy and Metallography;Mine and Quarry Operations
语种	英语
ISSN号	1938-5862
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184804]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Li, Yingtao,Liu, Ming,Long, Shibing,et al. Simulation of retention characteristics for metal nanocrystal nonvolatile memory with a modified direct tunneling model[C]. 见:ISTC/CSTIC 2009 (CISTC). Shanghai, China. March 19, 2009 - March 20, 2009.