IR studies of SiCN films deposited by RF sputtering method

	IR studies of SiCN films deposited by RF sputtering method
	Chen, Zhiyong; Lin, Hongfeng; Zhou JY(周金元); Ma, Ziwei; Xie EQ(谢二庆)
刊名	Journal of Alloys and Compounds
	2009-11-13
卷号	487 期号:1-2 页码:531-536
ISSN号	0925-8388
学科主题	凝聚态物理
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/185703]
专题	物理科学与技术学院_期刊论文
作者单位	兰州大学物理科学与技术学院
推荐引用方式 GB/T 7714	Chen, Zhiyong,Lin, Hongfeng,Zhou JY,et al. IR studies of SiCN films deposited by RF sputtering method[J]. Journal of Alloys and Compounds,2009,487(1-2):531-536.
APA	Chen, Zhiyong,Lin, Hongfeng,Zhou JY,Ma, Ziwei,&Xie EQ.(2009).IR studies of SiCN films deposited by RF sputtering method.Journal of Alloys and Compounds,487(1-2),531-536.
MLA	Chen, Zhiyong,et al."IR studies of SiCN films deposited by RF sputtering method".Journal of Alloys and Compounds 487.1-2(2009):531-536.