Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

	Numerical simulation study of organic nonvolatile memory with polysilicon floating gate
	Yan, ZW; Wang, J; Qiao, JL; Chen, WJ; Yang, P; Xiao, T; Yang, JH
刊名	CHINESE PHYSICS B
	2016-06
卷号	25 期号:6 页码:067102-1-067102-7
关键词	organic floating gate memory polysilicon floating gate programing and erasing operations device simulation
ISSN号	1674-1056
通讯作者	Yang, JH (reprint author), Lanzhou Univ, Inst Microelect, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000377876400050
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181603]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Yan, ZW,Wang, J,Qiao, JL,et al. Numerical simulation study of organic nonvolatile memory with polysilicon floating gate[J]. CHINESE PHYSICS B,2016,25(6):067102-1-067102-7.
APA	Yan, ZW.,Wang, J.,Qiao, JL.,Chen, WJ.,Yang, P.,...&Yang, JH.(2016).Numerical simulation study of organic nonvolatile memory with polysilicon floating gate.CHINESE PHYSICS B,25(6),067102-1-067102-7.
MLA	Yan, ZW,et al."Numerical simulation study of organic nonvolatile memory with polysilicon floating gate".CHINESE PHYSICS B 25.6(2016):067102-1-067102-7.