Numerical simulation study of organic nonvolatile memory with polysilicon floating gate | |
Yan, ZW; Wang, J; Qiao, JL; Chen, WJ; Yang, P; Xiao, T; Yang, JH | |
刊名 | CHINESE PHYSICS B
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2016-06 | |
卷号 | 25期号:6页码:067102-1-067102-7 |
关键词 | organic floating gate memory polysilicon floating gate programing and erasing operations device simulation |
ISSN号 | 1674-1056 |
通讯作者 | Yang, JH (reprint author), Lanzhou Univ, Inst Microelect, Lanzhou 730000, Peoples R China. |
学科主题 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000377876400050 |
内容类型 | 期刊论文 |
源URL | [http://ir.lzu.edu.cn/handle/262010/181603] ![]() |
专题 | 物理科学与技术学院_期刊论文 |
推荐引用方式 GB/T 7714 | Yan, ZW,Wang, J,Qiao, JL,et al. Numerical simulation study of organic nonvolatile memory with polysilicon floating gate[J]. CHINESE PHYSICS B,2016,25(6):067102-1-067102-7. |
APA | Yan, ZW.,Wang, J.,Qiao, JL.,Chen, WJ.,Yang, P.,...&Yang, JH.(2016).Numerical simulation study of organic nonvolatile memory with polysilicon floating gate.CHINESE PHYSICS B,25(6),067102-1-067102-7. |
MLA | Yan, ZW,et al."Numerical simulation study of organic nonvolatile memory with polysilicon floating gate".CHINESE PHYSICS B 25.6(2016):067102-1-067102-7. |
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