Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material | |
Sun, L; Li, Y; Ren, Q; Lv, WL; Zhang, JP; Luo, X; Zhao, FY; Chen, Z; Wen, ZW; Zhong, JK | |
刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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2016-01 | |
卷号 | 63期号:1页码:452-458 |
关键词 | Gate dielectric hybrid bulk-planar heterojunction neodymium phthalocyanine (NdPc2) photoresponsive organic FET (photOFET) photoresponsivity poly(vinyl alcohol) (PVA) red light |
ISSN号 | 0018-9383 |
通讯作者 | Sun, L (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China. |
学科主题 | Engineering; Physics |
语种 | 英语 |
WOS记录号 | WOS:000367259600061 |
内容类型 | 期刊论文 |
源URL | [http://ir.lzu.edu.cn/handle/262010/181447] ![]() |
专题 | 物理科学与技术学院_期刊论文 |
推荐引用方式 GB/T 7714 | Sun, L,Li, Y,Ren, Q,et al. Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(1):452-458. |
APA | Sun, L.,Li, Y.,Ren, Q.,Lv, WL.,Zhang, JP.,...&Liu, XY.(2016).Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(1),452-458. |
MLA | Sun, L,et al."Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.1(2016):452-458. |
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