Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

	Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure
	Li, YT; Yuan, P; Fu, LP; Li, RR; Gao, XP; Tao, CL
刊名	NANOTECHNOLOGY
	2015-10-02
卷号	26 期号:39
关键词	resistive switching volatile nonvolatile
ISSN号	0957-4484
通讯作者	Li, YT (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
学科主题	Science & Technology - Other Topics; Materials Science; Physics
语种	英语
WOS记录号	WOS:000361013200001
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181363]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, YT,Yuan, P,Fu, LP,et al. Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure[J]. NANOTECHNOLOGY,2015,26(39).
APA	Li, YT,Yuan, P,Fu, LP,Li, RR,Gao, XP,&Tao, CL.(2015).Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.NANOTECHNOLOGY,26(39).
MLA	Li, YT,et al."Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure".NANOTECHNOLOGY 26.39(2015).