Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene | |
Zhang, ZY; Xie, JF; Yang, DZ; Wang, YH; Si, MS; Xue, DS | |
刊名 | APPLIED PHYSICS EXPRESS |
2015-05 | |
卷号 | 8期号:5 |
ISSN号 | 1882-0778 |
通讯作者 | Si, MS (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China. |
学科主题 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000354963000027 |
内容类型 | 期刊论文 |
源URL | [http://ir.lzu.edu.cn/handle/262010/181213] |
专题 | 物理科学与技术学院_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, ZY,Xie, JF,Yang, DZ,et al. Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene[J]. APPLIED PHYSICS EXPRESS,2015,8(5). |
APA | Zhang, ZY,Xie, JF,Yang, DZ,Wang, YH,Si, MS,&Xue, DS.(2015).Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene.APPLIED PHYSICS EXPRESS,8(5). |
MLA | Zhang, ZY,et al."Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene".APPLIED PHYSICS EXPRESS 8.5(2015). |
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