Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

	Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor
	Zhang Y(张雍); Yang JH(杨建红); Cai XY(蔡雪原); Wang ZX(汪再兴)
刊名	半导体学报/Journal of Semiconductors
	2010-04-15
卷号	31 期号:4 页码:20-24
关键词	SIT OSIT potential barrier height normalized approach Ⅰ-Ⅴcharacteristics
ISSN号	16744926
通讯作者	Zhang, Y. (zhangy07@lzu.cn)
学科主题	714.2 Semiconductor Devices and Integrated Circuits;932.2 Nuclear Physics
语种	英语
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/178114]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Zhang Y,Yang JH,Cai XY,et al. Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor[J]. 半导体学报/Journal of Semiconductors,2010,31(4):20-24.
APA	张雍,杨建红,蔡雪原,&汪再兴.(2010).Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor.半导体学报/Journal of Semiconductors,31(4),20-24.
MLA	张雍,et al."Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor".半导体学报/Journal of Semiconductors 31.4(2010):20-24.