Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate

	Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate
	Wu CL(吴承龙); Yang JH(杨建红); Cai XY(蔡雪原); Dan XF(单晓锋)
刊名	半导体学报/Journal of Semiconductors
	2010-03-15
卷号	31 期号:3 页码:50-53
关键词	pentacene OTFT device optimization Pool-Frenkel mobility simulation
ISSN号	16744926
通讯作者	Chenglong, W. (wuchenglongwuli@163.com)
学科主题	741.3 Optical Devices and Systems;714.2 Semiconductor Devices and Integrated Circuits;712.1.2 Compound Semiconducting Materials;921.5 Optimization Techniques;712.1.1 Single Element Semiconducting Materials;701.1 Electricity: Basic Concepts and Phenomena;549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals;708.1 Dielectric Materials
语种	英语
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/178113]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wu CL,Yang JH,Cai XY,et al. Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate[J]. 半导体学报/Journal of Semiconductors,2010,31(3):50-53.
APA	吴承龙,杨建红,蔡雪原,&单晓锋.(2010).Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate.半导体学报/Journal of Semiconductors,31(3),50-53.
MLA	吴承龙,et al."Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate".半导体学报/Journal of Semiconductors 31.3(2010):50-53.