Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer

	Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer
	Lu FP(路飞平); Peng YQ(彭应全); Xing YZ(邢永忠)
刊名	Journal of Semiconductors
	2014-04-15
卷号	35 期号:4 页码:72-80
关键词	tandem organic light-emitting diodes numerical model interconnector layer transition metal oxide
ISSN号	16744926
通讯作者	Feiping, L. (lufp_sysu@163.com)
学科主题	Metallurgy and Metallography; Electricity: Basic Concepts and Phenomena; Light/Optics; Organic Compounds; Mathematics
语种	英语
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/178111]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Lu FP,Peng YQ,Xing YZ. Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer[J]. Journal of Semiconductors,2014,35(4):72-80.
APA	路飞平,彭应全,&邢永忠.(2014).Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer.Journal of Semiconductors,35(4),72-80.
MLA	路飞平,et al."Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer".Journal of Semiconductors 35.4(2014):72-80.