An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags

	An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags
	Jia XY(贾晓云); Feng P(冯鹏); Zhang SG(张胜广); Wu NJ(吴南健); Zhao BQ(赵柏秦); Liu S(刘肃)
刊名	Journal of Semiconductors
	2013-08-15
卷号	34 期号:8 页码:94-98
关键词	non-volatile memory ultra-low-power area-efficient CMOS RFID
ISSN号	16744926
其他题名	An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags
通讯作者	Wu, N. (nanjian@red.semi.ac.cn)
学科主题	714.2 Semiconductor Devices and Integrated Circuits;731.1 Control Systems
语种	英语
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/178107]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Jia XY,Feng P,Zhang SG,et al. An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags[J]. Journal of Semiconductors,2013,34(8):94-98.
APA	贾晓云,冯鹏,张胜广,吴南健,赵柏秦,&刘肃.(2013).An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags.Journal of Semiconductors,34(8),94-98.
MLA	贾晓云,et al."An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags".Journal of Semiconductors 34.8(2013):94-98.