Growth of homogeneous single-layer graphene on Ni-Ge binary substrate

	Growth of homogeneous single-layer graphene on Ni-Ge binary substrate
	Wang, G; Chen, D; Lu, ZT; Guo, QL; Ye, L; Wei, X; Ding, GQ; Zhang, M; Di, ZF; Liu, S
刊名	Applied Physics Letters
	2014-02-10
卷号	104 期号:6
关键词	Nickel Carbon Chemical vapor deposition Deposition Film growth Germanium Graphene Substrates Vapor deposition Binary substrate Binary systems Carbon segregation Fundamental limitations Graphene films Graphene growth Hydrogen gas Multilayer graphene
ISSN号	0003-6951
通讯作者	Liu, S (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000331803800038
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/106052]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang, G,Chen, D,Lu, ZT,et al. Growth of homogeneous single-layer graphene on Ni-Ge binary substrate[J]. Applied Physics Letters,2014,104(6).
APA	Wang, G.,Chen, D.,Lu, ZT.,Guo, QL.,Ye, L.,...&Liu, S.(2014).Growth of homogeneous single-layer graphene on Ni-Ge binary substrate.Applied Physics Letters,104(6).
MLA	Wang, G,et al."Growth of homogeneous single-layer graphene on Ni-Ge binary substrate".Applied Physics Letters 104.6(2014).