Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device

	Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device
	Xie, HW; Liu, Q; Li, YT; Lv, HB; Wang, M; Zhang, KW; Long, SB; Liu, S; Liu, M
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2012-10
卷号	27 期号:10 页码:-
ISSN号	0268-1242
通讯作者	Xie, HW (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Engineering; Materials Science; Physics
语种	英语
WOS记录号	WOS:000309111800009
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105627]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Xie, HW,Liu, Q,Li, YT,et al. Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(10):-.
APA	Xie, HW.,Liu, Q.,Li, YT.,Lv, HB.,Wang, M.,...&Liu, M.(2012).Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(10),-.
MLA	Xie, HW,et al."Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.10(2012):-.