Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device | |
Xie, HW; Liu, Q; Li, YT; Lv, HB; Wang, M; Zhang, KW; Long, SB; Liu, S; Liu, M | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
![]() |
2012-10 | |
卷号 | 27期号:10页码:- |
ISSN号 | 0268-1242 |
通讯作者 | Xie, HW (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China. |
学科主题 | Engineering; Materials Science; Physics |
语种 | 英语 |
WOS记录号 | WOS:000309111800009 |
内容类型 | 期刊论文 |
源URL | [http://202.201.7.4/handle/262010/105627] ![]() |
专题 | 物理科学与技术学院_期刊论文 |
推荐引用方式 GB/T 7714 | Xie, HW,Liu, Q,Li, YT,et al. Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(10):-. |
APA | Xie, HW.,Liu, Q.,Li, YT.,Lv, HB.,Wang, M.,...&Liu, M.(2012).Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(10),-. |
MLA | Xie, HW,et al."Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.10(2012):-. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论