Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films

	Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films
	Liu, YX; Hang, T; Xie, YZ; Bao, Z; Song, J; Zhang, HL; Xie, EQ
刊名	SENSORS AND ACTUATORS B-CHEMICAL
	2011-12-15
卷号	160 期号:1 页码:266-270
关键词	Mg(0.1) Zn(0.9)O PLD Hydrogen-sensing Mechanism ZnO
ISSN号	0925-4005
通讯作者	Xie, EQ (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China.
学科主题	Chemistry; Electrochemistry; Instruments & Instrumentation
语种	英语
WOS记录号	WOS:000298768100038
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105451]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Liu, YX,Hang, T,Xie, YZ,et al. Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films[J]. SENSORS AND ACTUATORS B-CHEMICAL,2011,160(1):266-270.
APA	Liu, YX.,Hang, T.,Xie, YZ.,Bao, Z.,Song, J.,...&Xie, EQ.(2011).Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films.SENSORS AND ACTUATORS B-CHEMICAL,160(1),266-270.
MLA	Liu, YX,et al."Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films".SENSORS AND ACTUATORS B-CHEMICAL 160.1(2011):266-270.