Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures

	Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures
刊名	INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
	2012-01-02
卷号	25 期号:1 页码:96-101
关键词	GaN-based MFS C-V characteristics thickness
ISSN号	0894-3370
通讯作者	Yang, JH (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Engineering; Mathematics
语种	英语
WOS记录号	WOS:000298577700008
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105444]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	. Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures[J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS,2012,25(1):96-101.
APA	(2012).Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS,25(1),96-101.
MLA	"Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures".INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 25.1(2012):96-101.