Write-Once-Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage

	Write-Once-Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage
	Qi, J; Zhang, Q; Huang, J; Ren, JJ; Olmedo, M; Liu, JL
刊名	IEEE ELECTRON DEVICE LETTERS
	2011-10
卷号	32 期号:10 页码:1445-1447
关键词	Conducting mechanism write-once-read-many-times (WORM) ZnO
ISSN号	0741-3106
通讯作者	Qi, J (reprint author), Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA.
学科主题	Engineering
语种	英语
WOS记录号	WOS:000295340300043
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105378]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Qi, J,Zhang, Q,Huang, J,et al. Write-Once-Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(10):1445-1447.
APA	Qi, J,Zhang, Q,Huang, J,Ren, JJ,Olmedo, M,&Liu, JL.(2011).Write-Once-Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage.IEEE ELECTRON DEVICE LETTERS,32(10),1445-1447.
MLA	Qi, J,et al."Write-Once-Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage".IEEE ELECTRON DEVICE LETTERS 32.10(2011):1445-1447.