Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering

	Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering
	Ma, Ziwei 1,2; Zhou JY(周金元)1; Chen, Zhiyong 3; Xie EQ(谢二庆)1
刊名	DIAMOND AND RELATED MATERIALS
	2011-04
卷号	20 期号:4 页码:475-479
关键词	SiCN Thin film Terbium Luminescence
ISSN号	0925-9635
通讯作者	Xie, EQ (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Elect Mat, Lanzhou 730000, Gansu, Peoples R China.
学科主题	Materials Science
语种	英语
WOS记录号	WOS:000291140200004
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105267]
专题	物理科学与技术学院_期刊论文
作者单位	1.兰州大学物理科学与技术学院 2.运城学院物理与电子工程学院 3.西京学院基础学院
推荐引用方式 GB/T 7714	Ma, Ziwei,Zhou JY,Chen, Zhiyong,et al. Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering[J]. DIAMOND AND RELATED MATERIALS,2011,20(4):475-479.
APA	Ma, Ziwei,Zhou JY,Chen, Zhiyong,&Xie EQ.(2011).Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering.DIAMOND AND RELATED MATERIALS,20(4),475-479.
MLA	Ma, Ziwei,et al."Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering".DIAMOND AND RELATED MATERIALS 20.4(2011):475-479.