Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device

	Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device
	Li, YT; Long, SB; Lv, HB; Liu, Q; Wang, W; Wang, Q; Huo, ZL; Wang, Y; Zhang, S; Liu, S
刊名	IEEE ELECTRON DEVICE LETTERS
	2011-03
卷号	32 期号:3 页码:363-365
关键词	Model reset instability resistance random access memory resistive random access memory (RRAM)
ISSN号	0741-3106
通讯作者	Li, YT (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
学科主题	Engineering
语种	英语
WOS记录号	WOS:000287658400047
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105182]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, YT,Long, SB,Lv, HB,et al. Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(3):363-365.
APA	Li, YT.,Long, SB.,Lv, HB.,Liu, Q.,Wang, W.,...&Liu, M.(2011).Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device.IEEE ELECTRON DEVICE LETTERS,32(3),363-365.
MLA	Li, YT,et al."Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device".IEEE ELECTRON DEVICE LETTERS 32.3(2011):363-365.