Highly Stable Radiation-Hardened Resistive-Switching Memory

	Highly Stable Radiation-Hardened Resistive-Switching Memory
	Wang, Y; Lv, HB; Wang, W; Liu, Q; Long, SB; Wang, Q; Huo, ZL; Zhang, S; Li, YT; Zuo, QY
刊名	IEEE ELECTRON DEVICE LETTERS
	2010-12
卷号	31 期号:12 页码:1470-1472
关键词	Conductive filament radiation resistive random access memory (RRAM) gamma ray
ISSN号	0741-3106
通讯作者	Wang, Y (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
学科主题	Engineering
语种	英语
WOS记录号	WOS:000284541400038
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105115]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang, Y,Lv, HB,Wang, W,et al. Highly Stable Radiation-Hardened Resistive-Switching Memory[J]. IEEE ELECTRON DEVICE LETTERS,2010,31(12):1470-1472.
APA	Wang, Y.,Lv, HB.,Wang, W.,Liu, Q.,Long, SB.,...&Liu, M.(2010).Highly Stable Radiation-Hardened Resistive-Switching Memory.IEEE ELECTRON DEVICE LETTERS,31(12),1470-1472.
MLA	Wang, Y,et al."Highly Stable Radiation-Hardened Resistive-Switching Memory".IEEE ELECTRON DEVICE LETTERS 31.12(2010):1470-1472.