Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications

	Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications
	Li, YT; Long, SB; Zhang, MH; Liu, Q; Shao, LB; Zhang, S; Wang, Y; Zuo, QY; Liu, S; Liu, M
刊名	IEEE ELECTRON DEVICE LETTERS
	2010-02
卷号	31 期号:2 页码:117-119
关键词	Nonvolatile memory resistance random access memory (RRAM) resistive switching ZrO2
ISSN号	0741-3106
通讯作者	Li, YT (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
学科主题	Engineering
语种	英语
WOS记录号	WOS:000274018000009
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/104902]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, YT,Long, SB,Zhang, MH,et al. Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications[J]. IEEE ELECTRON DEVICE LETTERS,2010,31(2):117-119.
APA	Li, YT.,Long, SB.,Zhang, MH.,Liu, Q.,Shao, LB.,...&Liu, M.(2010).Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications.IEEE ELECTRON DEVICE LETTERS,31(2),117-119.
MLA	Li, YT,et al."Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications".IEEE ELECTRON DEVICE LETTERS 31.2(2010):117-119.