Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

	Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications
	Wang, Y; Liu, Q; Long, SB; Wang, W; Wang, Q; Zhang, MH; Zhang, S; Li, YT; Zuo, QY; Yang, JH
刊名	NANOTECHNOLOGY
	2010-01-29
卷号	21 期号:4 页码:045202-
ISSN号	0957-4484
通讯作者	Liu, M (reprint author), Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China.
学科主题	Science & Technology - Other Topics;Materials Science;Physics
语种	英语
WOS记录号	WOS:000272963100004
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/104880]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang, Y,Liu, Q,Long, SB,et al. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications[J]. NANOTECHNOLOGY,2010,21(4):045202-.
APA	Wang, Y.,Liu, Q.,Long, SB.,Wang, W.,Wang, Q.,...&Liu, M.(2010).Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.NANOTECHNOLOGY,21(4),045202-.
MLA	Wang, Y,et al."Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications".NANOTECHNOLOGY 21.4(2010):045202-.