Room temperature visible green luminescence from a-GaN: Er film deposited by DC magnetron sputtering

	Room temperature visible green luminescence from a-GaN: Er film deposited by DC magnetron sputtering
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2008-06-30
卷号	458 期号:1-2 页码:579-582
关键词	DC sputtering amorphous GaN Er3+ doped photoluminescence
ISSN号	0925-8388
通讯作者	Pan, XJ (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
学科主题	Chemistry; Materials Science; Metallurgy & Metallurgical Engineering
语种	英语
WOS记录号	WOS:000256641200103
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/104493]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	. Room temperature visible green luminescence from a-GaN: Er film deposited by DC magnetron sputtering[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2008,458(1-2):579-582.
APA	(2008).Room temperature visible green luminescence from a-GaN: Er film deposited by DC magnetron sputtering.JOURNAL OF ALLOYS AND COMPOUNDS,458(1-2),579-582.
MLA	"Room temperature visible green luminescence from a-GaN: Er film deposited by DC magnetron sputtering".JOURNAL OF ALLOYS AND COMPOUNDS 458.1-2(2008):579-582.